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VAPORIZATION CHEMISTRY AND THERMODYNAMICS OF CONGRUENTLY VAPORIZING ZINC INDIUM SULFIDEEDWARDS JG; HAQUE R; QUSTI AH et al.1983; THERMOCHIMICA ACTA; ISSN 0040-6031; NLD; DA. 1983; VOL. 62; NO 2-3; PP. 197-208; BIBL. 18 REF.Article

COMPOSITION FAULTS IN ZNIN2S4 (III) LAYERED CRYSTALS AND THEIR INFLUENCE ON THE ANISOTROPIC CONDUCTIVITY OF THIS COMPOUNDANAGNOSTOPOULOS AN; MANOLIKAS C; PAPADOPOULOS D et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 731-736; ABS. GER; BIBL. 15 REF.Article

ELECTRON TRAP DISTRIBUTION DETERMINED BY MEANS OF CONDUCTIVITY MEASUREMENTS ON HIGHLY ANISOTROPIC ZNIN2S4 CRYSTALSANAGNOSTOPOULOS AN; KAROUTIS A.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 2; PP. 543-548; ABS. GER; BIBL. 19 REF.Article

Structure field maps for sulfides of composition AB2X4HAEUSELER, H.Journal of solid state chemistry (Print). 1990, Vol 86, Num 2, pp 275-278, issn 0022-4596Article

Composition faults in ZnmIn2S3+m crystalsFRANGIS, N; MANOLIKAS, C.Physica status solidi. A. Applied research. 1988, Vol 107, Num 2, pp 589-595, issn 0031-8965Article

Determination of the optical constants n, k of Zn3In2S6 and Zn5In2S8 from transmission measurementsKALOMIROS, J. A; SPYRIDELIS, J.Physica status solidi. A. Applied research. 1988, Vol 107, Num 2, pp 633-637, issn 0031-8965Article

ZnIn2S4 as a window in heterojunction solar cellsVIGIL, O; CALZADILLA, O; SEURET, D et al.Solar energy materials. 1984, Vol 10, Num 2, pp 139-143, issn 0165-1633Article

Optical measurements and temperature dependence of the energy gap in ZnIn2S4 layered compoundANAGNOSTOPOULOS, A; KAMBAS, K; PLOSS, B et al.Physica status solidi. B. Basic research. 1984, Vol 123, Num 2, pp K155-K159, issn 0370-1972Article

Equilibrium properties of the layer α-ZnIn2S4DE PASCALE, T. M; MELONI, F; SERRA, M et al.Il Nuovo cimento. D. 1991, Vol 13, Num 3, pp 291-299, issn 0392-6737Article

Studies on highly luminescent AgInS2 and Ag-Zn-In-S quantum dotsWEIDONG XIANG; CUIPING XIE; JING WANG et al.Journal of alloys and compounds. 2014, Vol 588, pp 114-121, issn 0925-8388, 8 p.Article

Synthesis and characterization of the ZnxCd1-xIn2S4 pseudoternary solid solutionCURTI, M; GASTALDI, L; LOTTICI, P. P et al.Journal of solid state chemistry (Print). 1987, Vol 69, Num 2, pp 289-298, issn 0022-4596Article

Trap saturation in ZnIn2S4CRANDLES, D; CHARBONNEAU, S; FORTIN, E et al.Solid state communications. 1985, Vol 56, Num 4, pp 367-370, issn 0038-1098Article

X-ray and spectroscopic investigations on polycrystalline CoxZn1-xIn2S4 solid solutionFIORANI, D; GASTALDI, L; VITICOLI, S et al.Solid state communications. 1983, Vol 48, Num 10, pp 865-867, issn 0038-1098Article

The trap distribution and the luminescence band in ZnIn2S4CRANDLES, D; FORTIN, E.Physica status solidi. A. Applied research. 1986, Vol 95, Num 1, pp K47-K51, issn 0031-8965Article

Voltage-dependent conductivity along the c-axis of ZnIn2S4 (III)ANAGNOSTOPOULOS, A. N; LIOUTAS, C.Physica status solidi. A. Applied research. 1983, Vol 79, Num 2, pp 513-516, issn 0031-8965Article

Optical properties of some AB2X4 layered compoundsBORGHESI, A; GUIZZETTI, G; NOSENZO, L et al.Progress in crystal growth and characterization. 1986, Vol 13, Num 2, pp 97-103, issn 0146-3535Article

Temperature dependence of the energy gap and some electrical properties of Zn2In2S5(II) single crystalsKALOMIROS, J. A; ANAGNOSTOPOULOS, A. N; SPYRIDELIS, J et al.Semiconductor science and technology. 1989, Vol 4, Num 7, pp 536-542, issn 0268-1242, 7 p.Article

Cointercalation in a ternary chalcogenideBIANCHETTI, M; HERREN, G; LASCALEA, G et al.Solid state ionics. 1992, Vol 50, Num 1-2, pp 115-123, issn 0167-2738Article

On the photoconductivity relaxation in ZnIn2S4SERPI, A; ZIELINGER, J. P.Physica status solidi. A. Applied research. 1988, Vol 108, Num 1, pp 351-362, issn 0031-8965Article

Photoconductivity and luminescence spectra of ZnIn2S4 crystals irradiated by γ-quantaARAMA, E. D; RADAUTSAN, S. I; TIGINYANU, I. M et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp K55-K57, issn 0031-8965Article

On the radiative recombination in ZnIn2S4GRILLI, E; GUZZI, M; CAMERLENGHI, E et al.Physica status solidi. A. Applied research. 1985, Vol 90, Num 2, pp 691-701, issn 0031-8965Article

Prediction study of structural, electronic and optical properties of XIn2S4 (X = Hg, Zn) thiospinels under pressure effectYOUSAF, Masood; INAM, F; KHENATA, R et al.Journal of alloys and compounds. 2014, Vol 589, pp 353-363, issn 0925-8388, 11 p.Article

Hydrostatic pressure dependence of the fundamental absorption edges of CdInGaS4 and ZnIn2S4TOYODA, T; SORAZAWA, M; NAKANISHI, H et al.Japanese journal of applied physics. 1992, Vol 32, pp 291-293, issn 0021-4922, SUP1Conference Paper

Comparison of the structure and the electric properties of ZnIn2S4(III)- and CdInGaS4-layered crystalsANAGNOSTOPOULOS, A. N; MANOLIKAS, C; PAPADOPOULOS, D et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 595-601, issn 0031-8965Article

A Raman study of compositional disorder in defect chalcopyritesRAZZETTI, C; LOTTICI, P. P; ZANOTTI, L et al.Physica status solidi. B. Basic research. 1983, Vol 118, Num 2, pp 743-749, issn 0370-1972Article

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